在EEPROM、MICROCONTROLLER中存储数据

Question

我正在使用 MCF51EM256 Freescale 微控制器，我在将一些数据存储在 EEPROM 中以使其持久存在时遇到了一些问题。

我需要将这个结构存储在 EEPROM 中：

typedef struct {
  ui64_s Ea_ps; 
  ui64_s Ea_ng;  
  ui64_s Er_q1;
  ui64_s Er_q2;
  ui64_s Er_q3;
  ui64_s Er_q4;
  uint16 F_ea;
  uint16 F_er;
}Ws_EnergyAcc64;

其中：

typedef union{    
  uint64 v;
  uint32 p[2];  
} ui64_s;

和：

typedef unsigned long long int uint64;
typedef unsigned long int uint32;
typedef unsigned short int uint16;

为此，我实现了以下功能：

void Save_EEPROM_WsEnergyAcc(long addr, Ws_EnergyAcc64* Acc) {

  // WsEnergyAcc struct needs 56 bytes in EEPROM

  uint32 F_ea_32 = (uint32) Acc->F_ea;
  uint32 F_er_32 = (uint32) Acc->F_er;

  Flash_Burst(addr, 2, Acc->Ea_ps.p);
  Flash_Burst(addr + 8, 2, Acc->Ea_ng.p);
  Flash_Burst(addr + 16, 2, Acc->Er_q1.p);
  Flash_Burst(addr + 24, 2, Acc->Er_q2.p);
  Flash_Burst(addr + 32, 2, Acc->Er_q3.p);
  Flash_Burst(addr + 40, 2, Acc->Er_q4.p);

  Flash_Burst(addr + 48, 2, &F_ea_32);
  Flash_Burst(addr + 52, 2, &F_er_32);

}

其中 "Flash_Burst":

#define Flash_Burst(Address, Size, DataPtr) \
      Flash_Cmd((UINT32)Address, (UINT16)Size, (UINT32*)DataPtr, FLASH_BURST_CMD)

UINT8 /*far*/ 
Flash_Cmd(UINT32 FlashAddress, 
      UINT16 FlashDataCounter, 
      UINT32 *pFlashDataPtr, 
      UINT8 FlashCommand)
{
  /* Check to see if FACCERR or PVIOL is set */
  if (FSTAT &0x30)  
  {         
      /* Clear Flags if set*/
      FSTAT = 0x30;  
  }

  if (FlashDataCounter)
  {
    do
    {
        /* Wait for the Last Busrt Command to complete */
        while(!(FSTAT&FSTAT_FCBEF_MASK)){};/*wait until termination*/

        /* Write Data into Flash*/
        (*((volatile unsigned long *)(FlashAddress))) = *pFlashDataPtr;
        FlashAddress += 4;
        pFlashDataPtr++;

        /* Write Command */
        FCMD = FlashCommand;

        /* Put FCBEF at 1 */
        FSTAT = FSTAT_FCBEF_MASK;

        asm (NOP);
        asm (NOP);
        asm (NOP);

         /* Check if Flash Access Error or Protection Violation Error are Set */
        if (FSTAT&0x30)
        {     
          /* If so, finish the function returning 1 to indicate error */
          return (1);
        }

    }while (--FlashDataCounter);
  }
  /* wait for the last command to complete */
  while ((FSTAT&FSTAT_FCCF_MASK)==0){};/*wait until termination*/

  /* Return zero to indicate that the function executed OK */
  return (0);
}

和：

void Init_EEPROM_WsEnergyAcc(long addr, Ws_EnergyAcc64* Acc) {

  uint32 F_ea_32;
  uint32 F_er_32;

  Acc->Ea_ps.p[0] = *(uint32 *)addr;
  addr = addr + 4;
  Acc->Ea_ps.p[1] = *(uint32 *)addr;
  Acc->Ea_ps.v = (uint64) Acc->Ea_ps.p[0] << 32 | Acc->Ea_ps.p[1];

  addr = addr + 4;
  Acc->Ea_ng.p[0] = *(uint32 *)addr;
  addr = addr + 4;
  Acc->Ea_ng.p[1] = *(uint32 *)addr;
  Acc->Ea_ng.v = (uint64) Acc->Ea_ng.p[0] << 32 | Acc->Ea_ng.p[1];

  addr = addr + 4;
  Acc->Er_q1.p[0] = *(uint32*)addr;
  addr = addr + 4;
  Acc->Er_q1.p[1] = *(uint32*)addr;
  Acc->Er_q1.v = (uint64) Acc->Er_q1.p[0] << 32 | Acc->Er_q1.p[1];

  addr = addr + 4;
  Acc->Er_q2.p[0] = *(uint32*)addr;
  addr = addr + 4;
  Acc->Er_q2.p[1] = *(uint32*)addr;
  Acc->Er_q2.v = (uint64) Acc->Er_q2.p[0] << 32 | Acc->Er_q2.p[1];

  addr = addr + 4;
  Acc->Er_q3.p[0] = *(uint32*)addr;
  addr = addr + 4;
  Acc->Er_q3.p[1] = *(uint32*)addr;
  Acc->Er_q3.v = (uint64) Acc->Er_q3.p[0] << 32 | Acc->Er_q3.p[1];  

  addr = addr + 4;
  Acc->Er_q4.p[0] = *(uint32*)addr;
  addr = addr + 4;
  Acc->Er_q4.p[1] = *(uint32*)addr;
  Acc->Er_q4.v = (uint64) Acc->Er_q4.p[0] << 32 | Acc->Er_q4.p[1];  

  addr = addr + 4;
  F_ea_32 = *(uint32*) addr;
  Acc->F_ea = (uint16) F_ea_32;

  addr = addr + 4;
  F_er_32 = *(uint32*) addr;
  Acc->F_er = (uint16) F_er_32;

}

为了测试我的功能，我做了一个小测试程序：

void testEEPROM(Ws_EnergyAcc64* Acc){

      Ws_EnergyAcc64 checkStruct;

      Acc->Ea_ps.p[0] = 0x10000000;
      Acc->Ea_ps.p[1] = 0x10000000;
      Acc->Ea_ng.p[0] = 0x10000000;
      Acc->Ea_ng.p[1] = 0x10000000;
      Acc->Er_q1.p[0] = 0x10000000;
      Acc->Er_q1.p[1] = 0x10000000;
      Acc->Er_q2.p[0] = 0x10000000;
      Acc->Er_q2.p[1] = 0x10000000;
      Acc->Er_q3.p[0] = 0x10000000;
      Acc->Er_q3.p[1] = 0x10000000;
      Acc->Er_q4.p[0] = 0x10000000;
      Acc->Er_q4.p[1] = 0x10000000;
      Acc->F_ea = 0x0000;
      Acc->F_er = 0x0000;

     Save_EEPROM_WsEnergyAcc(PhR_ABS_Ws_addr, Acc);

     Acc->Ea_ps.p[0] = 0x10011001;
     Acc->Ea_ps.p[1] = 0x10011002;
     Acc->Ea_ng.p[0] = 0x10011003;
     Acc->Ea_ng.p[1] = 0x10011004;
     Acc->Er_q1.p[0] = 0x10011005;
     Acc->Er_q1.p[1] = 0x10011006;
     Acc->Er_q2.p[0] = 0x10011007;
     Acc->Er_q2.p[1] = 0x10011008;
     Acc->Er_q3.p[0] = 0x10011009;
     Acc->Er_q3.p[1] = 0x1001100A;
     Acc->Er_q4.p[0] = 0x1001100B;
     Acc->Er_q4.p[1] = 0x1001100C;
     Acc->F_ea = 0x0000;
     Acc->F_er = 0x0000;

     Save_EEPROM_WsEnergyAcc(PhR_ABS_Ws_addr, Acc);     
     Init_EEPROM_WsEnergyAcc(PhR_ABS_Ws_addr, &checkStruct);

     printf("%d\n", checkStruct.Ea_ps.p[0]);
     printf("%d\n", checkStruct.Ea_ps.p[1]);
     printf("%d\n", checkStruct.Ea_ng.p[0]);
     printf("%d\n", checkStruct.Ea_ng.p[1]);
     printf("%d\n", checkStruct.Er_q1.p[0]);
     printf("%d\n", checkStruct.Er_q1.p[1]);
     printf("%d\n", checkStruct.Er_q2.p[0]);
     printf("%d\n", checkStruct.Er_q2.p[1]);
     printf("%d\n", checkStruct.Er_q3.p[0]);
     printf("%d\n", checkStruct.Er_q3.p[1]);
     printf("%d\n", checkStruct.Er_q4.p[0]);
     printf("%d\n", checkStruct.Er_q4.p[1]);
}

如果我只在EEPROM中写入一次，它就可以，但是如果我多次写入EEPROM，就像这个例子，它就不起作用，总是打印0x1000000。

有人可以帮助我吗？为什么不起作用？如果我能写一次，为什么我不能写更多次？

谢谢大家！

Answer 1

每次你想写一个EEPROM你必须擦除它。第一次成功，可能是因为 JTAG 执行了批量擦除。

另请注意，现代 MCU 中的 EEPROM 是仿真的，并使用部分片上闪存。这更好地解释了为什么必须在写入前擦除它。

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