stm32L476 - 擦除闪存

Question

L4 系列使用页（或组，如果您进行完全擦除）擦除闪存。但是我在擦除页面后写出了一些问题，我不确定为什么。

只是概述 objective 我存储了从 0x08080000 开始的 6 个值（第 256 页）然后我存储更多值，从 0x08080800)（第 257 页）到 0x08085800（第 267 页）

我使用一个函数来 erase/write 第 256 页的值：

void write_bias_flash(int16_t biases[]) {
    uint16_t *flash_biases = (uint16_t*) (ADDR_FLASH_PAGE_256);
    static FLASH_EraseInitTypeDef EraseInitStruct;
    Address = ADDR_FLASH_PAGE_256;

    /* Fill EraseInit structure*/
    EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
    EraseInitStruct.Page = 0;
    EraseInitStruct.Banks = FLASH_BANK_2;
    EraseInitStruct.NbPages = 1;

    HAL_FLASH_Unlock();
    if (HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError) != HAL_OK) {
        serprintf("Error erasing biases at address: 0x%x", Address);
    }
    for (int8_t bias = 0; bias < 6; bias++) {
         if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD,
                Address + bias * sizeof(uint64_t), (uint64_t) biases[bias])
                != HAL_OK)
            serprintf("Error writing biases to flash.");
     }
    HAL_FLASH_Lock();
    serprintf("Biases stored in flash.");
}

这项工作很棒。没问题。

我有两个函数用于 erase/write 从 0x08080800 开始的数据）（第 257 页）：

void Erase_TM_Flash() {
    uint8_t *flash = (uint8_t*) (FLASH_USER_START_ADDR);
    uint8_t *b = (uint16_t*) (ADDR_FLASH_PAGE_256);
    static FLASH_EraseInitTypeDef EraseInitStruct;
    Address = FLASH_USER_START_ADDR;

    /* Fill EraseInit structure*/
    EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
    EraseInitStruct.Page = 1;
    EraseInitStruct.NbPages = 255;
    EraseInitStruct.Banks = FLASH_BANK_2;

    HAL_FLASH_Unlock();
    if (HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError) != HAL_OK) {
        serprintf("Error erasing biases at address: 0x%x", Address);
    }

    HAL_FLASH_Lock();

    for (uint16_t i = 0; i< (FLASH_ROW_SIZE * sizeof(uint64_t))*255; i++)
    {
        if ((uint16_t) *(flash+i) != 255) {
            serprintf("0x%x is not erased (%i)", flash+i, (uint16_t) *(flash+i));
        }

    }

}
void Save_to_Flash(uint32_t *data) {

    uint32_t src_addr = (uint32_t) data;
    Erase_TM_Flash();
    serprintf("Saving to flash...");
    HAL_StatusTypeDef HAL_STATUS;

    HAL_FLASH_Unlock();
    Address = FLASH_USER_START_ADDR;
    while (Address < (FLASH_USER_END_ADDR - (FLASH_ROW_SIZE * sizeof(uint64_t)))) {
        HAL_STATUS = HAL_FLASH_Program(FLASH_TYPEPROGRAM_FAST, Address, (uint64_t) src_addr);
        if (HAL_STATUS == HAL_OK) {
          Address = Addres+ (FLASH_ROW_SIZE * sizeof(uint64_t));
            src_addr = src_addr + (FLASH_ROW_SIZE * sizeof(uint64_t));
            } else {
                serprintf("Error writing flash at address 0x%x. (%i)", Address, HAL_STATUS);
                Address = Address + (FLASH_ROW_SIZE * sizeof(uint64_t));
                src_addr = src_addr + (FLASH_ROW_SIZE * sizeof(uint64_t));
            }
    }
    HAL_FLASH_Lock();
    serprintf("Done");
    }

擦除工作正常。我验证调试器中的值（以及我检查未擦除页面的代码）。但是当保存发生时：

Error writing flash at address 0x8080800. (1)
Error writing flash at address 0x8080900. (1)
Error writing flash at address 0x8080a00. (1)
Error writing flash at address 0x8080b00. (1)

以此类推所有剩余页面。

但是，如果我擦除整个闪存：

void Erase_Flash() {
    serprintf("Erasing flash...");
    HAL_FLASH_Unlock();
    /* Clear OPTVERR bit set on virgin samples */
    __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_OPTVERR);

    /* Fill EraseInit structure*/
    EraseInitStruct.TypeErase = FLASH_TYPEERASE_MASSERASE;
    EraseInitStruct.Banks = FLASH_BANK_2;

    if (HAL_FLASHEx_Erase(&EraseInitStruct, &PAGEError) != HAL_OK) {
        serprintf("Error erasing flash.");
    }
    HAL_FLASH_Lock();
    serprintf("Done.");
}

然后写作就像一个魅力。 HAL_STATUS = 1，根据我找到的代码是 HAL_ERROR = 0x01U，这并不完全有用。

我不确定有什么区别，但我希望对我的擦除进行另一组观察可以揭示问题所在。

谢谢！

Answer 1

此问题似乎与闪存快速编程有关，并非所有 STM32 型号都提供此功能。

根据Reference Manual (RM0351)，在使用快速编程之前必须对闪存进行批量擦除。否则会发生 编程序列错误 ，并且 FLASH_SR 寄存器中的 PGSERR 位将被设置。请参阅 3.3.7 闪存主存储器编程序列 部分 快速编程 / 编程错误 和 3.7.5 闪存状态寄存器(FLASH_SR) under Bit 7 PGSERR.

RM0351 修订版 9，3.3.7 闪存主存储器编程序列，第 106 页：

Fast programming
(...)
1. Perform a mass erase of the bank to program. If not, PGSERR is set.
2. (...)

RM0351 修订版 9，3.3.7 闪存主存储器编程序列，第 107 页：

Programming errors
(...)
PGSERR: Programming Sequence Error
PGSERR is set if one of the following conditions occurs:
– (...)
– In the fast programming sequence: the Mass erase is not performed before setting 
  FSTPG bit.
– (...)

因此，观察到的行为符合预期。 - 所以你可以替换你的 Erase_TM_Flash() 功能并使用 Erase_Flash() 首先批量擦除整个闪存组。或者，完全避免使用闪存快速编程，而是使用 FLASH_Program_DoubleWord() 或 FLASH_Program(FLASH_TYPEPROGRAM_DOUBLEWORD, ...)。

相关源文件：stm32l4xx_hal_flash.h, stm32l4xx_hal_flash.c

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